06.10.2010 LED20FC-PR-WIN 1 of 2 LED20FC-PR-WIN technical data mid-infrared light emitting diode, flip-chip design light emitting diodes with central wavelength 2.02 m series are based on heterostructures grown on gasb substrates by lpe. solid solutions algaassb are used in the active layer. wide band gap solid solutions algaassb with al content 64% are used for good electron confinement. LED20FC-PR-WIN has a stable ouput power and a lifetime more then 80000 hours. features ? structure: gainassb/algaassb, flip-chip design ? peak wavelength: typ. 2.02 m ? optical ouput power: typ. 1.2 mw qcw ? package: to-18, with pr and window specifications rating item condition min. typ. max. unit peak wavelength t=300 k 2.00 2.02 2.09 m fwhm 150 ma cw 100 150 250 nm quasi-cw optical power 200 ma qcw 0.8 1.2 1.8 mw pulsed optical power 1 a 20 30 40 mw switching time t=300 k 10 20 30 ns operation voltage 200 ma qcw v operating temperature -240 ? +50 c emitting area 670x770 m soldering temperature 180 c package to-18, with parabolic reflector and quartz window (unit: mm) operating regime quasi-cw ? maximum current 220 ma ? recommended current 150-200ma pulsed ? maximum current 1 a (puls lenght 500 ns, repetition rate 2khz)
06.10.2010 LED20FC-PR-WIN 2 of 2 typical performance curves
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